(China (Mainland))
Product Summary
The ISSI IS61WV51216BLL-10TLI is a high-speed, 8M-bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI’s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.
Parametrics
IS61WV51216BLL-10TLI absolute maximum ratings: (1)Terminal Voltage with Respect to GND: –0.5 to VDD + 0.5 V; (2)VDD Relates to GND: –0.3 to 4.0 V; (3)Storage Temperature: –65 to +150 ℃; (4)Power Dissipation: 1.0 W.
Features
IS61WV51216BLL-10TLI features: (1)High-speed access times: 8, 10, 20 ns; (2)High-performance, low-power CMOS process; (3)Multiple center power and ground pins for greater noise immunity; (4)Easy memory expansion with CE and OE options; (5)CE power-down; (6)Fully static operation: no clock or refresh required; (7)TTL compatible inputs and outputs; (8)Single power supply; (9)Packages available: 48-ball miniBGA (9mm x 11mm), 44-pin TSOP (Type II); (10)Industrial and Automotive Temperature Support; (11)Lead-free available; (12)Data control for upper and lower bytes.
Diagrams
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 IS61WV51216BLL-10TLI |
ISSI |
SRAM 8M (512Kx16) 10ns Async SRAM 3.3v |
Data Sheet |
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IS61WV51216BLL-10TLI-TR |
ISSI |
SRAM 8M (512Kx16) 10ns Async SRAM 3.3v |
Data Sheet |
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